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  d a t a sh eet product speci?cation supersedes data of 1998 april 10 file under integrated circuits, ic01 1999 jan 22 integrated circuits uaa3220ts frequency shift keying (fsk)/amplitude shift keying (ask) receiver
1999 jan 22 2 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts features low cost single-chip ask or fsk receiver superheterodyne architecture with high integration level few external low cost components and crystal required wide supply voltage range low power consumption wide frequency range, 250 to 920 mhz high sensitivity if bandwidth determined by application high selectivity automotive temperature range ssop24 package. applications keyless entry systems car alarm systems remote control systems security systems telemetry systems wireless data transmission domestic appliance. general description the uaa3220ts is a fully integrated single-chip receiver, primarily intended for use in vhf and uhf systems. it supports both amplitude shift keying (ask) and frequency shift keying (fsk) demodulation. by connecting demo1 (pin 10) to ground during realisation of the receiver module the uaa3220ts works as an ask receiver (see fig.10). by connecting pin 10 as shown in fig.9 the uaa3220ts works as an fsk receiver. the uaa3220ts incorporates a crystal stabilized local oscillator, frequency multiplier, balanced mixer, post mixer amplifier, limiter, received signal strength indicator (rssi), fsk demodulator, data filter, data slicer and power down circuit. quick reference data symbol parameter conditions min. typ. max. unit v cc supply voltage 2.7 - 5.5 v i cc supply current f i(rf) = 433.92 mhz; fsk mode operating mode on; v pwd =0v 2.8 4.3 5.8 ma operating mode off; v pwd =v cc - 330 m a ask mode p i(max)(ask) maximum input power ber 3% - 22 - 16 - 10 dbm f i(ask) sensitivity into pin mixin f i(rf) = 433.92 mhz; ber 3% -- 119 - 113 dbm fsk mode p i(max)(fsk) maximum input power ber 3% - 6 0 +1 dbm f i(fsk) sensitivity into pin mixin f i(rf) = 433.92 mhz; ber 3% -- 103 - 100 dbm
1999 jan 22 3 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts ordering information block diagram type number package name description version uaa3220ts ssop24 plastic shrink small outline package; 24 leads; body width 5.3 mm sot340-1 fig.1 block diagram. handbook, full pagewidth mgm742 pma demodulator am/fm switch data slicer mixer bias 22 fa 23 mixin 24 mgnd 16 15 18 cpb 17 cpc cpa 11 demo2 12 gnd 10 demo1 9 pwd multiplier 3 7 tn 8 tp 6 tem oscillator 2 ose 3 osb 4 v cc 5 osc 1 ognd rssi lin v cci 21 20 lfb 19 data 14 cgnd 13 limiter amplifier - + uaa3220ts 2/ 3
1999 jan 22 4 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts pinning symbol pin description ognd 1 oscillator ground ose 2 oscillator emitter osb 3 oscillator base v cc 4 positive supply voltage osc 5 oscillator collector tem 6 frequency multiplier emitter resistor tn 7 frequency multiplier negative output tp 8 frequency multiplier positive output pwd 9 power down control input demo1 10 fm demodulator 1, ask/fsk switch demo2 11 fm demodulator 2 gnd 12 general ground cgnd 13 comparator ground data 14 data output cpa 15 comparator input a cpb 16 comparator input b cpc 17 comparator input c rssi 18 rssi output lfb 19 limiter feedback lin 20 limiter input v cci 21 if ampli?er positive supply voltage fa 22 if ampli?er output mixin 23 mixer input mgnd 24 mixer ground fig.2 pin configuration. handbook, halfpage ognd ose osb v cc osc tem tn tp pwd demo1 demo2 gnd mgnd mixin fa v cci lfb rssi lin cpc cpb cpa data cgnd 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 uaa3220ts mgm743
1999 jan 22 5 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts functional description mixer the mixer is a single-balanced emitter-coupled mixer with internal biasing. matching of the rf source impedance to the mixer input requires an external matching network. oscillator the oscillator is based on a transistor connected in common collector configuration followed by a cascode stage driving a tuned circuit. the voltage at this tuned circuit drives the frequency multiplier. the bias current of the oscillator is set by an off-chip resistor (r40 in the application diagram of fig.9) to a typical value of 260 m a at 433.92 mhz (r40 = 1.8 k w ). the oscillator frequency is controlled by an off-chip overtone crystal (x40). off-chip capacitors between base and emitter (c42) and ground (c41) make the oscillator transistor appear as having negative resistance at small signal levels. this causes the oscillator to start. a parallel resonance circuit (l40 and c41) connected to the emitter of the oscillator transistor prevents oscillation at the fundamental frequency of the crystal. the lc tank circuit at the output of the oscillator is used to select either the fundamental, the second or the third harmonic of the oscillator frequency. frequency multiplier the frequency multiplier is an emitter-coupled transistor pair driving an off-chip balanced tuned circuit. the bias current of this emitter coupled pair is set by an off-chip resistor (r50) to a typical value of 350 m a at 433.92 mhz (r50 = 1.2 k w ). the oscillator output signal is ac-coupled to one of the inputs of the emitter-coupled pair. the other input is connected to ground via an on-chip capacitor. the output voltage of the frequency multiplier drives the switching stage of the mixer. the bias voltage at this point is set by an off-chip resistor (r51) to allow sufficient voltage swing at the mixer outputs. post mixer ampli?er the post mixer amplifier (pma) is a differential input, single-ended output amplifier. amplifier gain is provided in order to reduce the influence of the limiter noise figure on the total noise figure. limiter the limiter is a single-ended input multiple stage amplifier with high total gain. amplifier stability is achieved by means of an external dc feedback capacitor (c21), which is also used to determine the lower limiter cut-off frequency. an rssi signal proportional to the limiter input signal is provided. figure 3 shows the dc voltage at pin 18 (rssi) as a function of the input voltage (rms value) at pin 20 (lin). it also gives the typical if of 10.7 mhz. the lower knee of the level curve (see fig.3) is determined by the effective noise bandwidth and is, consequently, slightly higher. if ?lter if filtering with high selectivity is realized by means of an external ceramic filter (x20), which feeds the if from the pma to the limiter. fm demodulator coming from the limiter the fsk signal is fed differential to the input of the fm demodulator. after buffering the signal is fed to a phase detector. the phase shift is generated by an external lc combination connected to demo1 (pin 10) and demo2 (pin 11). the baseband signal is coupled out single ended via an output buffer and is fed to the fsk input of the ask/fsk switch. ask/fsk switch the selection of either ask or fsk reception will be done by the demo1 (pin 10). grounding this pin to 0 v will switch the ic to ask mode. additional the fm demodulator and parts of the data slicer will be switched off. in fsk mode demo1 (pin 10) is connected to demo2 (pin 11) via a lc combination (see fig.9). data ?lters after demodulation a two-stage data filtering circuit is provided in order to suppress unwanted frequency components. two rc low-pass filters with on-chip resistors are provided which are separated by a buffer stage.
1999 jan 22 6 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts data slicer data detection is provided by means of a level comparator with adaptive slice reference. after the first data filter stage the pre-filtered data is split into two paths. one passes the second data filter stage and is fed to the positive comparator input. the other path is fed to an integration circuit with a large time constant in order to derive the average value (dc component) as an adaptive slice reference which is presented to the negative comparator input. the internal buffer provides 13 db ac voltage gain. the adaptive reference allows to detect the received data over a large range of noise floor levels. the integration circuit consists of a simple rc low-pass filter with on-chip resistors. the data slicer output is designed with internal pull-up. rssi buffer the rssi buffer is an amplifier with a voltage gain of 0 db. at fsk receive mode the rssi output provides a field strength indication. it has an output impedance of 10 k w . figure 3 shows the level curve (rssi curve) as a function of the limiter input voltage (rms value). fig.3 level curve v rssi as a function of v lin(rms) . handbook, full pagewidth 1.55 1.25 1.15 1.45 1.35 mgm744 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 v rssi (v) v lin(rms) (v) (1) (2) (3) (1) t amb =85 c. (2) t amb =27 c. (3) t amb = - 40 c.
1999 jan 22 7 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts limiting values in accordance with the absolute maximum rating system (iec 134). note 1. machine model: c = 200 pf, r = 0 w and l = 0.75 m h; pins are connected to gnd and v cc . thermal characteristics symbol parameter conditions min. max. unit v cc supply voltage - 0.3 +8.0 v p i(max) absolute maximum input power - 3 dbm t amb operating ambient temperature - 40 +85 c t stg storage temperature - 55 +125 c v es electrostatic handling note 1 pins 3 and 6 - 50 +50 v pin 2 - 100 +100 v pin 5 - 250 +150 v pin 23 - 200 +250 v all other pins - 250 +250 v symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient in free air 125 k/w
1999 jan 22 8 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts dc characteristics v cc = 2.7 v; t amb =25 c; for application diagram see figs 9 and 10; crystal disconnected; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit supplies v cc supply voltage 2.7 - 5.5 v i cc supply current operating mode on; v pwd = 0 v; notes 1 and 2 fsk demodulation; note 3 2.8 4.3 5.8 ma ask demodulation; note 4 2.5 3.7 4.9 ma operating mode off; v pwd =v cc - 330 m a v pwd voltage on pin pwd operating mode on (receiving mode) 0 - 300 mv operating mode off (sleep mode) v cc - 0.3 - v cc v i pwd current into pin pwd operating mode on (receiving mode); v pwd =0v - 30 - 10 - 3 m a operating mode off (sleep mode); v pwd =v cc - 215 m a oscillator v ose dc voltage at pin 2 independent of oscillator 0.33 0.38 0.43 v v osb dc voltage at pin 3 independent of oscillator 1.05 1.15 1.25 v multiplier v tem dc voltage at pin 6 independent of oscillator 0.33 0.39 0.45 v v tn,tp dc voltage at pins 7 and 8 independent of oscillator 2.01 2.21 2.41 v mixer v mixin dc voltage at pin 23 independent of oscillator 0.68 0.78 0.88 v post mixer ampli?er v fa dc voltage at pin 22 independent of oscillator 1.10 1.25 1.40 v limiter v lin dc voltage at pin 20 independent of oscillator 1.85 1.95 2.05 v v lfb dc voltage at pin 19 independent of oscillator 1.85 1.95 2.05 v v rssi dc voltage at pin 18 independent of oscillator 1.00 1.16 1.32 v
1999 jan 22 9 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts notes 1. for f i(rf) = 868.35 mhz all values + 0.6 ma. 2. crystal connected; oscillator and multiplier active. 3. pin demo1 connected to pin demo2 via tank circuit. 4. pin demo1 short circuited to ground. 5. the given values are applicable for fsk reception mode. in ask mode pin 10 is short circuited to ground. 6. no modulation and f if = 10.7 mhz. demodulator v demo1,2 dc voltage at pins 10 and 11 independent of oscillator; note 5 2.00 2.24 2.48 v v demo1(ask) dc voltage at pin 10 to switch in ask mode 0 - 300 mv data ?lter and slicer v cpa,cpb,cpc dc voltage at pins 15, 16 and 17 ask mode 1.27 1.42 1.57 v fsk mode; note 6 1.81 2.01 2.21 v v oh(data) high-level output voltage at pin 14 i data = - 10 m av cc - 0.5 - v cc v v ol(data) low-level output voltage at pin 14 i data = 200 m a0 - 0.6 v symbol parameter conditions min. typ. max. unit
1999 jan 22 10 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts ac characteristics v cc = 2.7 v; t amb =25 c; for application diagram see figs 9 and 10; f i(rf) = 433.92 mhz (see table 4) and f i(rf) = 868.35 mhz (see table 5); f mod = 1 khz square wave; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit system performance f i(rf) rf input frequency 250 - 920 mhz f if if frequency 10.56 10.7 10.84 mhz p i(max) maximum input power -- 3 dbm ask mode; ber 3%; notes 1 and 2 - 22 - 16 - 10 dbm fsk mode; ber 3%; notes 2 and 3 - 6 0 +1 dbm p spur spurious radiation note 4 --- 57 dbm f data data frequency note 5 - 1 - khz t on(rx) receiver turn-on time notes 6 and 7 f i(rf) = 433.92 mhz - 610ms f i(rf) = 868.35 mhz - 37ms v rssi rssi voltage 1.1 - 1.6 v ask mode f i(ask) input sensitivity directly into pin mixin ber 3%; notes 1 and 2 f i(rf) = 433.92 mhz -- 119 - 113 dbm f i(rf) = 868.35 mhz -- 116 - 110 dbm fsk mode f i(fsk) input sensitivity directly into pin mixin ber 3%; notes 2 and 3 -- 103 - 100 dbm d f frequency deviation (peak value) 4 10 75 khz df (fsk)(max) maximum sensitivity degradation d f=4khz -- 3db g dem demodulator gain note 8 0.75 1.0 1.25 mixer and post mixer ampli?er z i input impedance of mixer f i(rf) = 433.92 mhz - 600 -w f i(rf) = 868.35 mhz - 300 -w ip3 pma interception point (mixer + pma) - 38 - 30 - dbm g pma gain (mixer + pma) note 9 40 42 50 db z o(if) output impedance of if ampli?er 280 330 380 w mv khz --------- -
1999 jan 22 11 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts notes 1. 100% am modulation (ask); available power from generator into a 50 w load. 2. with external matching network, to transform the impedance to 50 w. 3. d f = 10 khz; available power from generator into a 50 w load. 4. measured at the rf input connector of the test board into a 50 w load; f i(rf) = 25 mhz to 1 ghz. 5. the data frequency range can be varied by changing c30 to c32 (see figs 9 and 10) to match other bit rates. data frequency determined by data slicer application. 6. t on = 50 ms; t off = 138 ms; p = p sens + 3 db. 7. the given turn-on time is only valid during strobing by pin pwd; if the ic is strobed on and off by the supply voltage the turn-on time will be longer. 8. lc tank circuit (l60, c60) tuned to maximum phase slope. 9. g pma is typically 6 db lower when measured in the application, because of the load of the ceramic filter. limiter r i(lin) limiter input resistance 40 48 56 k w buffer r cpc data buffer output resistance at pin 17 24 30 36 k w g buffer data buffer ac gain 12 13 14 db r cpa,cpb data buffer output resistance at pins 15 and 16 120 150 180 k w data slicer; see chapter dc characteristics b ds internal data slicer bandwidth 50 - 100 khz symbol parameter conditions min. typ. max. unit
1999 jan 22 12 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts internal circuitry table 1 equivalent pin circuits and pin voltages for rough test of printed-circuit board; v cc = 2.7 v; no input signal pin no. pin symbol dc voltage (v) equivalent circuit 1 ognd 0 2 ose 0.38 3 osb 1.15 5 osc 2.7 4v cc 2.7 6 tem 0.39 7 tn 2.21 8 tp 2.21 9 pwd - 10 demo1 2.24 11 demo2 2.24 12 gnd 0 mha780 3 1 5 2 v cc 8.15 k w gnd mha781 9.6 k w gnd 5 6 7 8 v cc mgm750 210 k w 9 v cc mgm751 7 k w 7 k w 10 k w 11 12 10
1999 jan 22 13 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts 13 cgnd 0 15 cpa 1.95 16 cpb 1.95 14 data - 17 cpc 1.95 18 rssi 1.16 pin no. pin symbol dc voltage (v) equivalent circuit mgm753 16 150 k w 150 k w 13 15 v cc mgm754 1 k w 13 14 v cc mgm755 30 k w 17 v cc gnd mgm752 12 18 10 k w
1999 jan 22 14 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts 19 lfb 1.95 20 lin 1.95 21 v cci 2.7 22 fa 1.25 23 mixin 0.78 24 mgnd 0 pin no. pin symbol dc voltage (v) equivalent circuit mgm756 19 v cc gnd mgm757 48 k w v cc 20 gnd mgm758 330 w 21 22 gnd mgm759 24 23 15 w
1999 jan 22 15 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts test information tuning procedures t uning procedure for ac tests 1. turn on the signal generator (f i(rf) = 433.92 or 868.35 mhz; no modulation; rf input level = - 50 dbm). 2. tune first c50 (multiplier tank circuit), second c11 (rf stage input) to obtain a peak if voltage at pin fa. t uning procedure for ask reception 1. make sure that pin demo1 is short circuited to ground. 2. turn on ask modulation and check that data is appearing on the data output pin and proceed with the ac tests. t uning procedure for fsk reception 1. make sure that pins demo1 and demo2 are connected by the lc tank circuit. 2. turn on fsk modulation ( d f = 10 khz; rf input level = - 103 dbm). 3. tune c61 (or l60) (phase shifter lc tank circuit) to obtain a peak lf voltage at pin cpc. 4. check that data is appearing on pin data and proceed with the ac tests. ac test conditions table 2 test signals the reference signal level p ref for the following tests is de?ned as the minimum input level in dbm to give a ber 3 10 - 2 (e.g. 60 bit errors per second for 2000 bits/s). all test signal levels refer to 50 w load condition. test signal frequency (mhz) data signal modulation modulation index frequency deviation 1 433.92/868.35 1000 hz square wave am (ask) 100% - 2 433.92/868.35 1000 hz square wave fm (fsk) - 10 khz 3 433.92/868.35 - no modulation -- 4 433.82/868.35 - no modulation --
1999 jan 22 16 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts table 3 tests and results p 1 is the maximum available power from signal generator 1 at the input of the test board; p 2 is the maximum available power from signal generator 2 at the input of the test board. notes 1. the voltage at pin pwd of the test circuit alternates between operating mode: on (50 ms; 0 v) and off (138 ms; v cc ); see fig.4. 2. probe of spectrum analyzer connected to pin fa (pin 22). 3. spectrum analyzer connected to the input of the test board. test generator result 12 ask sensitivity into pin mixin (see fig.5) modulated test signal 1; p 1 - 113 dbm for f i(rf) = 433.92 mhz; p 1 - 110 dbm for f i(rf) = 868.35 mhz - ber 3 10 - 2 (e.g. 60 bit errors per second for 2000 bits/s) fsk sensitivity into pin mixin (see fig.5) modulated test signal 2; p 1 - 100 dbm - ber 3 10 - 2 (e.g. 60 bit errors per second for 2000 bits/s) maximum input power for ask (see fig.5) modulated test signal 1; p 1 3- 22 dbm - ber 3 10 - 2 (e.g. 60 bit errors per second for 2000 bits/s) maximum input power for fsk (see fig.5) modulated test signal 2; p 1 3- 6 dbm - ber 3 10 - 2 (e.g. 60 bit errors per second for 2000 bits/s) receiver turn-on time; see note 1 and fig.4 modulated test signal 1 or 2; p 1 =p ref +3db - check that the ?rst 10 bits are correct; error counting is started 10 ms after power down is switched into operating mode on interception point (mixer + pma) see note 2 and fig.6 test signal 3; p 1 = - 40 dbm test signal 4; p 2 =p 1 measure with high impedance probe at pin fa (for im3 see fig.6) spurious radiation; see note 3 and fig.7 -- no spurious signals (25 mhz to 1 ghz) with level higher than maximum p spur ip3 pma p 1 im3 2 --------- - dbm + = fig.4 timing diagram for pulsed power down voltage. handbook, full pagewidth mgm745 v pwd (v) 2.7 0 0 50 188 238 376 426 t (ms)
1999 jan 22 17 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts fig.5 test configuration a (single generator). (1) for test circuit see fig.9. (2) for ber test facility see fig.8. test circuit (1) (2) generator 1 50 w med900 ber test facility fig.6 test configuration c (ip3). (1) for test circuit see fig.9. spectrum analyzer with probe test circuit (1) generator 1 50 w 2-signal power combiner 50 w generator 2 50 w med901 d f d f = 100 khz d f d f im3
1999 jan 22 18 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts fig.7 test configuration d (spurious radiation). (1) for test circuit see fig.9. spectrum analyzer input impedance 50 w test circuit (1) med902 fig.8 ber test facility. device under test signal generator master clock bit pattern generator preset delay data comparator integrate and dump rx data ber test board to error counter tx data med904 delayed tx data
1999 jan 22 19 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here in this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force land scape pages to be ... application information n dbook, full pagewidth mgm747 pma demodulator am/fm switch data slicer mixer bias 22 fa 23 mixin 24 mgnd 16 15 18 cpb c31 17 cpc cpa 11 demo2 12 gnd 10 demo1 9 pwd multiplier 3 7 tn 8 tp 6 tem oscillator 2 ose 3 osb 4 v cc v cc 5 osc 1 ognd rssi lin v cci v cc 21 20 lfb 19 data 14 c32 c30 c33 c21 c20 r20 x20 c51 l50 r51 c43 l41 l51 c40 r40 c41 c44 c70 r50 l40 r41 c22 c11 l10 c10 c12 cgnd 13 limiter amplifier - + uaa3220ts data output power-down rssi 50 w rf input c60 c61 c50 c42 r60 l60 x40 2/ 3 fig.9 application diagram (fsk reception).
1999 jan 22 20 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here in this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force land scape pages to be ... n dbook, full pagewidth mgm748 pma demodulator am/fm switch data slicer mixer bias 22 fa 23 mixin 24 mgnd 16 15 18 cpb c31 17 cpc cpa 11 demo2 12 gnd 10 demo1 9 pwd multiplier 3 7 tn 8 tp 6 tem oscillator 2 ose 3 osb 4 v cc v cc 5 osc 1 ognd rssi lin v cci v cc 21 20 lfb 19 data 14 c32 c30 c33 c21 c20 r20 x20 c51 l50 r51 c43 l41 l51 c40 r40 c41 c44 c70 r50 l40 r41 c22 c11 l10 c10 c12 cgnd 13 limiter amplifier - + uaa3220ts data output power-down rssi 50 w rf input c50 c42 x40 2/ 3 fig.10 application diagram (ask reception).
1999 jan 22 21 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts table 4 component list for figs 9 and 10; f i(rf) = 433.92 mhz component component characteristics value tolerance temperature coefficient (ppm/k) loss factor at 1 mhz quality factor self resonance frequency r20 330 w 2% +50 -- - r40 1.8 k w 2% +50 -- - r41 not placed -- - - - r50 1.2 k w 2% +50 -- - r51 1.5 k w 2% +50 -- - r60 4.7 k w 2% +50 -- - c10 (1) 2.7 pf 10% 0 30 tan d 20 10 - 4 -- c11 3 to 10 pf - 0 300 tan d 20 10 - 4 -- c12 100 pf 10% 0 30 tan d 10 10 - 4 -- c20 1 nf 10% 0 30 tan d 10 10 - 4 -- c21 47 nf 10% 0 30 tan d 10 10 - 4 -- c22 1 nf 10% 0 30 tan d 10 10 - 4 -- c30 2.7 nf 10% 0 30 tan d 10 10 - 4 -- c31 470 pf 10% 0 30 tan d 10 10 - 4 -- c32 47 nf 10% 0 30 tan d 10 10 - 4 -- c33 10 nf 10% 0 30 tan d 10 10 - 4 -- c40 1 nf 10% 0 30 tan d 20 10 - 4 -- c41 (1) 15 pf 10% 0 30 tan d 20 10 - 4 -- c42 15 pf 10% 0 30 tan d 10 10 - 4 -- c43 (1) 8.2 pf 10% 0 30 tan d 20 10 - 4 -- c44 1 nf 10% 0 30 tan d 10 10 - 4 -- c50 3to10pf - 0 300 tan d 20 10 - 4 -- c51 1 nf 10% 0 30 tan d 10 10 - 4 -- c60 (2) 82 pf 10% 0 30 tan d 10 10 - 4 -- c61 (2) 5to30pf - 0 300 tan d 10 10 - 4 -- c70 not placed -- - - - l10 (3) 8nh 5% +25 to +125 -3 140 at 150 mhz 3 3 ghz l40 560 nh 10% +25 to +125 -3 45 at 100 mhz 3 400 mhz l41 100 nh 10% +25 to +125 -3 60 at 350 mhz 3 1 ghz l50 (3) 8nh 5% +25 to +125 -3 140 at 150 mhz 3 3 ghz l51 (3) 8nh 5% +25 to +125 -3 140 at 150 mhz 3 3 ghz l60 (2) 2.2 m h 10% +25 to +125 -3 37 at 7.9 mhz 3 150 mhz x20 ceramic ?lter, murata sfe 10.7 ma 5 a; see note 4 x40 3rd overtone crystal, 70.5367 mhz; see note 5
1999 jan 22 22 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts notes 1. c10, c41 and c43 can be placed as tuning capacitors on the pcb. 2. c60, c61 and l60 can be substituted by an lc tank. 3. l10, l50 and l51 are 3 turn air coils. 4. 3 db bandwidth: 280 50 khz; insertion loss: 4 db typical and 6 db maximum; spurious: 30 db minimum at 8 to 12 mhz; input and output impedance: 330 w. 5. motional resistance: r m 20 w; static capacitance: c 0 6 pf; load capacitance: c l = 6 pf; loaded parallel resonance frequency: 70.5367 mhz; drive level dependency: r m 20 w (1 nw p 1 mw).
1999 jan 22 23 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts table 5 component list for figs 9 and 10; f i(rf) = 868.35 mhz component component characteristics value tolerance temperature coefficient (ppm/k) loss factor at 1 mhz quality factor self resonance frequency r20 330 w 5% 100 --- r40 1.5 k w 5% 100 --- r41 not placed ----- r50 390 w 5% 100 --- r51 330 w 5% 100 --- r60 4.7 k w 5% 100 --- c10 27 pf 5% 0 30 tan d 10 10 - 4 -- c11 1.7 to 3 pf - 0 300 tan d 20 10 - 4 -- c12 27 pf 5% 0 30 tan d 10 10 - 4 -- c20 1 nf 10% 15% (1) tan d 2.5% -- c21 47 nf 10% 15% (1) tan d 2.5% -- c22 1 nf 10% 15% (1) tan d 2.5% -- c30 3.3 nf 10% 15% (1) tan d 2.5% -- c31 680 pf 10% 15% (1) tan d 2.5% -- c32 10 nf 10% 15% (1) tan d 2.5% -- c33 10 nf 10% 15% (1) tan d 2.5% -- c40 1 nf 10% 15% (1) tan d 2.5% -- c41 12 pf 5% 0 30 tan d 10 10 - 4 -- c42 12 pf 5% 0 30 tan d 10 10 - 4 -- c43 4 pf 0.25 pf 0 30 tan d 15 10 - 4 -- c44 47 pf 5% 0 30 tan d 10 10 - 4 -- c50 2.5 to 6 pf - 0 300 tan d 20 10 - 4 -- c51 47 pf 5% 0 30 tan d 10 10 - 4 -- c60 (2) 82 pf 5% 0 30 tan d 10 10 - 4 -- c61 (2) 5to30pf - 0 300 tan d 3.4 10 - 4 -- c70 4.7 m f 20% 15% (1) tan d 0.06 -- l10 (3) ------ l40 560 nh 10% +25 to +125 -3 30 at 25 mhz 3 415 mhz l41 39 nh 10% +25 to +125 -3 50 at 50 mhz 3 1.5 ghz l50 (3) ------ l51 (3) ------ l60 (2) 2.2 m h 10% +25 to +125 -3 20 at 7.9 mhz 3 140 mhz x20 ceramic ?lter, murata sfe 107 ma 5 a; see note 4 x40 3rd overtone crystal, 95.2944 mhz; see note 5
1999 jan 22 24 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts notes 1. temperature coefficient given as maximum d c/c over temperature range. 2. c60, c61 and l60 can be substituted by an lc tank. 3. realized as microstrip line; see fig.12. 4. 3 db bandwidth: 280 50 khz; insertion loss: 4 db typical and 6 db maximum; spurious: 30 db minimum at 8 to 12 mhz; input and output impedance: 330 w. 5. motional resistance: r m 20 w; static capacitance: c 0 6 pf; load capacitance: c l = 6 pf; loaded parallel resonance frequency: 95.2944 mhz; drive level dependency: r m 20 w (1 nw p 1 mw).
1999 jan 22 25 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts fig.11 printed-circuit board layout for f i(rf) = 433.92 mhz. handbook, full pagewidth bottom view top view mgm749 47 44 rf in c11 c21 rssi data out c12 c40 r40 r50 r51 c50 c70 x40 c51 l50 l60 v cc l51 c44 c42 c61 c60 r60 c43 r41 c41 c10 l10 x10 l40 l41 uaa3220ts r20 c20 c22 c33 c30 c32 c31 dimensions in mm.
1999 jan 22 26 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts fig.12 printed-circuit board layout for f i(rf) = 868.35 mhz. dimensions in mm. handbook, full pagewidth bottom view data out rssi rf in c33 c30 c32 c31 con9 c70 c51 c43 c44 c42 c41 r40 c40 r51 r41 l41 l40 x40 c20 x20 r20 c22 c21 c12 c11 c10 c60 c61 l60 jumper r60 r50 uaa3220ts c50 n.p. 47 46 mhb459
1999 jan 22 27 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts package outline unit a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm 0.21 0.05 1.80 1.65 0.38 0.25 0.20 0.09 8.4 8.0 5.4 5.2 0.65 1.25 7.9 7.6 0.9 0.7 0.8 0.4 8 0 o o 0.13 0.1 0.2 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.20 mm maximum per side are not included. 1.03 0.63 sot340-1 mo-150ag 93-09-08 95-02-04 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 112 24 13 0.25 y pin 1 index 0 2.5 5 mm scale ssop24: plastic shrink small outline package; 24 leads; body width 5.3 mm sot340-1 a max. 2.0
1999 jan 22 28 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering is not always suitable for surface mount ics, or for printed-circuit boards with high population densities. in these situations reflow soldering is often used. re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 230 c. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1999 jan 22 29 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 2. these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 4. wave soldering is only suitable for lqfp, tqfp and qfp packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. package soldering method wave reflow (1) bga, sqfp not suitable suitable hlqfp, hsqfp, hsop, htssop, sms not suitable (2) suitable plcc (3) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (3)(4) suitable ssop, tssop, vso not recommended (5) suitable data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1999 jan 22 30 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts notes
1999 jan 22 31 philips semiconductors product speci?cation frequency shift keying (fsk)/amplitude shift keying (ask) receiver uaa3220ts notes
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1999 sca61 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2865, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 62 5344, fax.+381 11 63 5777 for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 489 4339/4239, fax. +30 1 481 4240 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 printed in the netherlands 545002/00/02/pp32 date of release: 1999 jan 22 document order number: 9397 750 04896


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